silicon-based transistors

Introduction Ultrathin sapphire synthesized for the advancement of next-generation transistors, represents a cutting-edge material in the evolution of miniaturized semiconductor chips. This innovative approach addresses the limitations of traditional silicon-based transistors as device dimensions shrink, aiming to enhance electrical performance and efficiency in electronic applications. With remarkable properties such as high dielectric strength, excellent thermal stability, and superior mechanical durability, ultrathin sapphire is positioned to play a crucial role in the development of flexible and high-density electronic devices, including those used in the Internet of Things (IoT) and wearable technology. The synthesis of ultrathin sapphire employs various advanced techniques, including Chemical Vapor Deposition (CVD) and Metal-Organic Chemical Vapor Deposition (MOCVD), […]